Samples run by request only.
See ALD Film Request Form below.
A plasma-enhanced atomic layer deposition (PE-ALD) system enables the conformal fabrication of thin films of various materials with atomic-scale control. ALD is a controlled chemical vapor deposition process that utilizes gas precursors to deposit a film one atomic layer at a time. Adding a remote plasma to an ALD system, as in this PE-ALD, expands the deposition parameter space by enabling precursor molecules to be cracked in the plasma rather than relying solely on thermal energy from the heated substrate. The ALD-150LX is a load-locked system, meaning the processing chamber is kept isolated from the sample loading chamber so as to maintain cleanliness of the process chamber and increase throughput. This PE-ALD system is also equipped with an in situ ellipsometer system (Film Sense, FS-1 Multi-Wavelength) that enables precise monitoring of film growth.
Available Films That Can Be Grown by Request:
Growth of the following films is available up to a thickness of 20 nm:
- Al2O3 (Thermal- or PE-ALD)
- HfO2 (Thermal- or PE-ALD)
- ZrO2 (Thermal- or PE-ALD)
- HfZrO2 (Thermal- or PE-ALD)
- TiN (PE-ALD) – COMING SOON
- Ga2O3 (PE-ALD)
Substrate Specifications:
- No exposed organics (such as polymers)
- No exposed materials with high outgassing properties (for a decent though not comprehensive overview see: This Link)
- Up to full 150 mm (6”) wafers
- Small samples able to be clipped to wafer carrier
- Note that nucleation and growth of ALD films is dependent on the substrate material and typically excels when nucleating on a hydroxylated surface