Plasma-Enhanced Atomic Layer Deposition (PE-ALD) System

Plasma-Enhanced Atomic Layer Deposition (PE-ALD) System
Kurt Lesker ALD-150LX
Primary Training Contact

Samples run by request only. 

See ALD Film Request Form below.

Operating Procedures

A plasma-enhanced atomic layer deposition (PE-ALD) system enables the conformal fabrication of thin films of various materials with atomic-scale control. ALD is a controlled chemical vapor deposition process that utilizes gas precursors to deposit a film one atomic layer at a time. Adding a remote plasma to an ALD system, as in this PE-ALD, expands the deposition parameter space by enabling precursor molecules to be cracked in the plasma rather than relying solely on thermal energy from the heated substrate. The ALD-150LX is a load-locked system, meaning the processing chamber is kept isolated from the sample loading chamber so as to maintain cleanliness of the process chamber and increase throughput. This PE-ALD system is also equipped with an in situ ellipsometer system (Film Sense, FS-1 Multi-Wavelength) that enables precise monitoring of film growth.


Available Films That Can Be Grown by Request:

Growth of the following films is available up to a thickness of 20 nm:

  • Al2O3 (Thermal- or PE-ALD)
  • HfO2 (Thermal- or PE-ALD)
  • ZrO2 (Thermal- or PE-ALD)
  • HfZrO2 (Thermal- or PE-ALD)
  • Ga2O3 (PE-ALD)

Substrate Specifications:

  • No exposed organics (such as polymers)
  • No exposed materials with high outgassing properties (for a decent though not comprehensive overview see: This Link)
  • Up to full 150 mm (6”) wafers
  • Small samples able to be clipped to wafer carrier
  • Note that nucleation and growth of ALD films is dependent on the substrate material and typically excels when nucleating on a hydroxylated surface