Oxide/Nitride/Polymer Reactive Ion Etcher

Oxide/Nitride/Polymer Reactive Ion Etcher
Trion Technology Phantom II
Primary Training Contact
Operating Procedures

The Trion Phantom II reactive ion etcher (RIE) is designed for either isotropic or anisotropic dry etching of silicon dioxide, silicon nitride and other materials using fluorine and oxygen based chemistries (CF4, CHF3, SF6, O2). It has a compact modular design on a space-saving rollaway platform. It has an open chamber design allowing for easy loading and processing of multiple sized substrates or pieces up to 8 inches in diameter. A 600 watt 13.56MHz inductively coupled plasma (ICP) generator and 170 liter/sec turbo pump allow for a large process window for many applications. A touchscreen interface with Windows/PC software for the process controller allows easy monitoring of process parameters at all times.

  • Reactive Ion Etching (RIE) of silicon dioxide, silicon nitride, polymers, and other materials using fluorine and oxygen chemistries
  • Available gases: CF4, CHF3, SF6, O2
  • 600 watt 13.56MHz inductively coupled plasma (ICP) generator
  • 170 liter/sec turbo pump
  • Hard anodized aluminum cathode and anode for protection from process chemistries
  • Ability to process subtrates from small pieces up to 8 inch diameter wafers
  • Touchscreen interface with Windows software on a PC process controller
  • Independent pressure control
  • Recirculating temperature controlling water chiller
  • 23 cfm rotary vane rough pump with fomblin oil