E-Beam Lithography System

E-Beam Lithography System
Code
EBL1
Model
Elionix ELS-7500 EX E-Beam Lithography System
Location
EBL
Primary Training Contact

Jay Dalton, Talmage Tyler

Operating Procedures
Helpful Links

The ELS-7500EX is capable of producing ultra fine features down to a 10nm linewidth.  It offers a Zr/W thermal field emission electron gun with a maximum 50Kev accelerating voltage and minimum beam diameter of 2nm.   It has a Windows based CAD and GUI layout, with a conversion capability for previously generated CAD files.  The Laser interferometer stage and 18 bit DAC beam positioning system provide excellent stitching and writing capabilities.   The various stage options allow for patterning of substrate sizes ranging from small pieces (1cm) up to wafers that are 6" in diameter.

Applications
  • Electron Beam Lithography (EBL)
  • SEM Imaging
Features
  • Sample holders for:
    • Small pieces
    • Wafers from 2"-6"
    • Photomasks
  • Circle pattern generator
  • Spot lithography function
  • Variable field size function
  • CAD system with pattern data creation program and lithography control program
  • Data conversion function (GDSII and DXF formats)
Specifications
  • Field sizes: 1200um, 600um, 300um, 150um, and 75um
  • Minimum linewidth: 10nm (with 75um field at 50kV)
  • Scan rate: 0.1usec/step - 3200usec/step
  • Minimum beam diameter: 2nm
  • Beam current:18pa - 2nA
  • Stage movement range:
    • x: 100mm
    • y: 110mm
    • z: 5mm
  • Stage position resolution:
    • x,y:  1nm
    • z: 0.2um
  • Field stitching accuracy:
    • 75um field: <10nm
    • 150um field: <20nm
    • 300um field: <30nm
  • Overlay accuracy: 30nm