The plasma process is accomplished through the use of a low pressure RF induced gaseous discharge. The specimen is loaded into the reaction chamber and the chamber is evacuated to a vacuum pressure of 0.1 - 0.2Torr. A carrier gas is then introduced into the chamber, raising the chamber pressure to 0.3 - 1.2Torr, depending on the application. RF power is applied around the chamber. This excites the carrier gas molecules and dissociates it into chemically active atoms and molecules. The mechanism employed in this process is one of ionization. The combustion products, which are completely dissociated and harmless, are carried away in the gas stream. The unique property of this process is that it occurs at relatively low temperatures without employing toxic chemicals.
- Organic material removal through microincineration
- Photoresist ashing/removal
- Use of oxygen and/or argon gases for sample preparation or surface treatments
- Etching organic samples for SEM & TEM work
- Cleaning of SEM/TEM sample holders
- PDMS bonding prep
- Barrel Chamber with isotropic etching
- Low temperature ashing/etching/cleaning
- Automatic tuning of RF power
- Vacuum monitoring
- Dual flow gauge gas control (up to two process gases)
- Needle valve vent control
- Micro-controller with default settings programmable by the operator
- Indication of settings by LCD display of status/entry
- Indication of conditions during cycle for vacuum, power and time Rack-out draw loading door for ease of sample access and process
- Pyrex barrel chamber measuring 110mm long with a 160mm diameter
- RF power supply – Solid state 150 Watts RF peak @ 13.56MHz (normal operating range is 50 to 100 Watts)
- Active vacuum gauge display with range of atmosphere to 1x10-5mbar (normal operating vacuum is 0.5 to 1.0 mbar)
- Controlled time display up to 99.9 hours Needle valve process gas control with a range of 5 to 100sccm