III-V Reactive Ion Etcher

Image
III-V Reactive Ion Etcher
Code
RIE2
Model
Trion Technology Minilock II
Location
Cleanroom
Primary Training Contact
Operating Procedures

The Trion Minilock II reactive ion etcher (RIE) is designed for either isotropic or anisotropic dry etching of compound III-V semiconductors and metals using chlorine and bromine based chemistries (BCl3, Cl2, HBr, SiCl4, CH4, H2, CF4, O2, Ar). It has a compact modular design on a space-saving rollaway platform. Included in the system is an integrated vacuum loadlock to meet all of the safety and equipment needs for the more challenging etch processes that require corrosive chemistries. Also, it can handle processing of multiple sized substrates or pieces up to 5 inches in diameter. A 600 watt 13.56MHz inductively coupled plasma (ICP) generator and a helical groove pump allow for a large process window for many applications. A touchscreen interface with Windows/PC software for the process controller allows easy monitoring of process parameters at all times.

Applications
  • Reactive Ion Etching (RIE) of compound III-V semiconductors using chlorine and bromine based chemistries
Features
  • Available gases: BCl3, Cl2, HBr, SiCl4, CH4, H2, CF4, O2, Ar
  • 600 watt 13.56MHz inductively coupled plasma (ICP) generator
  • Separate vacuum loadlock with robot arm for sample transfer
  • Ability to process substrates from small pieces up to 5 inch diameter wafers
  • Touchscreen interface with Windows software on a PC process controller
  • Independent pressure control
  • Recirculating temperature controlled heater/chiller
  • Helical groove pump
  • 50 cfm corrosive series dry rough pump